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GC20N65T - MOSFET

General Description

The GC20N65T uses advanced super junction technology and design to provide excellent RDS(ON) and low gate charge.

This device is suitable for industry AC-DC SMPS requirement of PFC, AC/DC power conversion, and other industrial power applications.

Key Features

  • Optimized body diode reverse recovery performance.
  • Low on-resistance and low conduction losses.
  • Small Package.
  • Ultra Low Gate Charge cause lower driving requirement.
  • 100% Avalanche Tested.
  • RoHS Compliant.

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Datasheet Details

Part number GC20N65T
Manufacturer GOFORD
File Size 3.23 MB
Description MOSFET
Datasheet download datasheet GC20N65T Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GOFORD Description The GC20N65T uses advanced super junction technology and design to provide excellent RDS(ON) and low gate charge. This device is suitable for industry AC-DC SMPS requirement of PFC, AC/DC power conversion, and other industrial power applications.