GT105N10 Overview
The GT105N10K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
N-channel Enhancement Mode Power MOSFET
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | GT105N10 |
|---|---|
| Manufacturer | GOFORD |
| File Size | 658.08 KB |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Datasheet | GT105N10 GT105N10K Datasheet (PDF) |
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The GT105N10K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
| Part Number | Description |
|---|---|
| GT105N10F | N-Channel Enhancement Mode Power MOSFET |
| GT105N10K | N-Channel Enhancement Mode Power MOSFET |
| GT105N10T | N-Channel Enhancement Mode Power MOSFET |
| GT1003B | MOSFET |
| GT110N06 | N-Channel Enhancement Mode Power MOSFET |
| GT110N06S | N-Channel Enhancement Mode Power MOSFET |
| GT120N10 | MOSFET |
| GT125N10 | MOSFET |
| GT15N10 | MOSFET |