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GT105N10 - N-Channel Enhancement Mode Power MOSFET

Download the GT105N10 datasheet PDF. This datasheet also covers the GT105N10K variant, as both devices belong to the same n-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Key Features

  • l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l 100% Avalanche Tested l RoHS Compliant 100V 60A < 10.5mΩ Schematic diagram.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (GT105N10K-GOFORD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number GT105N10
Manufacturer GOFORD
File Size 658.08 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet GT105N10 Datasheet

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Other Datasheets by GOFORD

Part Number Description
GT105N10F N-Channel Enhancement Mode Power MOSFET
GT105N10K N-Channel Enhancement Mode Power MOSFET
GT105N10T N-Channel Enhancement Mode Power MOSFET
GT1003B MOSFET
GT110N06 N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
GT105N10K N-Channel Enhancement Mode Power MOSFET Description The GT105N10K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l 100% Avalanche Tested l RoHS Compliant 100V 60A < 10.