GT105N10 - N-Channel Enhancement Mode Power MOSFET

This page provides the datasheet information for the GT105N10, a member of the GT105N10K N-Channel Enhancement Mode Power MOSFET family.

Description

provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Features

l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l 100% Avalanche Tested l RoHS Compliant 100V 60A < 10.5mΩ Schematic diagram.

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GT105N10 N-Channel Enhancement Mode Power MOSFET by GOFORD - Datasheet Preview — Datasheet preview – GT105N10

Datasheet Details

Part number	GT105N10
Manufacturer	GOFORD
File Size	658.08 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	GT105N10 Datasheet
Additional preview pages of the GT105N10 datasheet.

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Full PDF Text Transcription

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GT105N10K N-Channel Enhancement Mode Power MOSFET Description The GT105N10K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l 100% Avalanche Tested l RoHS Compliant 100V 60A < 10.

Published: Nov 3, 2024 |