GT105N10F Overview
The GT105N10F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
N-channel Enhancement Mode Power MOSFET
| Part number | GT105N10F |
|---|---|
| Manufacturer | GOFORD |
| File Size | 673.18 KB |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Datasheet | GT105N10F-GOFORD.pdf |
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The GT105N10F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
| Part Number | Description |
|---|---|
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