GT105N10F Overview
The GT105N10F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
GT105N10F Details
| Part number | GT105N10F |
|---|---|
| Datasheet | GT105N10F Datasheet PDF (Download) |
| File Size | 673.18 KB |
| Manufacturer | GOFORD |
| Description | N-Channel Enhancement Mode Power MOSFET |
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