Datasheet4U Logo Datasheet4U.com

GT400P10 - P-Channel Enhancement Mode Power MOSFET

This page provides the datasheet information for the GT400P10, a member of the GT400P10T P-Channel Enhancement Mode Power MOSFET family.

Description

provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Features

  • l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l RDS(ON) (at VGS = -4.5V) l 100% Avalanche Tested l RoHS Compliant -100V -35A < 35mΩ < 40mΩ Schematic diagram.

📥 Download Datasheet

Datasheet preview – GT400P10

Datasheet Details

Part number GT400P10
Manufacturer GOFORD
File Size 927.05 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet GT400P10 Datasheet
Additional preview pages of the GT400P10 datasheet.

📁 Similar Datasheet

  • GT4050D - Photovoltaic bypass module diode (GREATEEN)
  • GT40G121 - Silicon N-Channel IGBT (Toshiba Semiconductor)
  • GT40J121 - Silicon N-Channel IGBT (Toshiba)
  • GT40J321 - Silicon N-Channel IGBT (Toshiba Semiconductor)
  • GT40J322 - Silicon N-Channel IGBT (Toshiba Semiconductor)
  • GT40M101 - SILICON N-CHANNEL IGBT (Toshiba Semiconductor)
  • GT40M301 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • GT40Q321 - Silicon N-Channel IGBT (Toshiba Semiconductor)
  • GT40Q322 - Silicon N-Channel IGBT (Toshiba Semiconductor)
  • GT40Q323 - Silicon N-Channel IGBT (Toshiba Semiconductor)
Other Datasheets by GOFORD
  • GT400P10T - P-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

Click to expand full text
GT400P10T P-Channel Enhancement Mode Power MOSFET Description The GT400P10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l RDS(ON) (at VGS = -4.
Published: |