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GT400P10T - P-Channel Enhancement Mode Power MOSFET

General Description

provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Key Features

  • l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l RDS(ON) (at VGS = -4.5V) l 100% Avalanche Tested l RoHS Compliant -100V -35A < 35mΩ < 40mΩ Schematic diagram.

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Datasheet Details

Part number GT400P10T
Manufacturer GOFORD
File Size 927.05 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet GT400P10T Datasheet

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Other Datasheets by GOFORD

Part Number Description
GT400P10 P-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GT400P10T P-Channel Enhancement Mode Power MOSFET Description The GT400P10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l RDS(ON) (at VGS = -4.