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GT52N10

Manufacturer: GOFORD

This datasheet includes multiple variants, all published together in a single manufacturer document.

GT52N10 datasheet preview

Datasheet Details

Part number GT52N10
Datasheet GT52N10 GT52N10D5 Datasheet (PDF)
File Size 866.21 KB
Manufacturer GOFORD
Description N-Channel Enhancement Mode Power MOSFET
GT52N10 page 2 GT52N10 page 3

GT52N10 Overview

The GT52N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.

GT52N10 Key Features

  • ID (at VGS = 10V)
  • RDS(ON) (at VGS = 10V)
  • RDS(ON) (at VGS = 4.5V) < 10mΩ
  • 100% Avalanche Tested
  • RoHS pliant
  • Power switch
  • DC/DC converters
  • Synchronous Rectification

More Datasheets from GOFORD

See all GOFORD datasheets

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GT52N10 TO-220 N-Channel Enhancement Mode Power MOSFET
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GT55N06 N-Channel Enhancement Mode Power MOSFET
GT55N06D5 N-Channel Enhancement Mode Power MOSFET
GT58N12 MOSFET

GT52N10 Distributor

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