Datasheet4U Logo Datasheet4U.com

GT52N10 Datasheet N-Channel Enhancement Mode Power MOSFET

Manufacturer: GOFORD

Download the GT52N10 datasheet PDF. This datasheet also includes the GT52N10D5 variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (GT52N10D5-GOFORD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number GT52N10
Manufacturer GOFORD
File Size 866.21 KB
Description N-Channel Enhancement Mode Power MOSFET
Download GT52N10 Download (PDF)

General Description

The GT52N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

General

Overview

GOFORD GT52N10D5 N-Channel Enhancement Mode Power MOSFET.

Key Features

  • VDS.
  • ID (at VGS = 10V).
  • RDS(ON) (at VGS = 10V) 100V 71A < 7.5mΩ.
  • RDS(ON) (at VGS = 4.5V) < 10mΩ.
  • 100% Avalanche Tested.
  • RoHS Compliant.

More Datasheets from GOFORD

Part Number Description
GT52N10 TO-220 N-Channel Enhancement Mode Power MOSFET
GT52N10D5 N-Channel Enhancement Mode Power MOSFET
GT52N10T N-Channel Enhancement Mode Power MOSFET
GT55N06 N-Channel Enhancement Mode Power MOSFET
GT55N06D5 N-Channel Enhancement Mode Power MOSFET
GT58N12 MOSFET