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GT52N10D5 Datasheet N-Channel Enhancement Mode Power MOSFET

Manufacturer: GOFORD

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Datasheet Details

Part number GT52N10D5
Manufacturer GOFORD
File Size 866.21 KB
Description N-Channel Enhancement Mode Power MOSFET
Download GT52N10D5 Download (PDF)

General Description

The GT52N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

General

Overview

GOFORD GT52N10D5 N-Channel Enhancement Mode Power MOSFET.

Key Features

  • VDS.
  • ID (at VGS = 10V).
  • RDS(ON) (at VGS = 10V) 100V 71A < 7.5mΩ.
  • RDS(ON) (at VGS = 4.5V) < 10mΩ.
  • 100% Avalanche Tested.
  • RoHS Compliant.

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