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GT52N10D5 - N-Channel Enhancement Mode Power MOSFET

Description

provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS.
  • ID (at VGS = 10V).
  • RDS(ON) (at VGS = 10V) 100V 71A < 7.5mΩ.
  • RDS(ON) (at VGS = 4.5V) < 10mΩ.
  • 100% Avalanche Tested.
  • RoHS Compliant.

📥 Download Datasheet

Datasheet preview – GT52N10D5

Datasheet Details

Part number GT52N10D5
Manufacturer GOFORD
File Size 866.21 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet GT52N10D5 Datasheet
Additional preview pages of the GT52N10D5 datasheet.

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Full PDF Text Transcription

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GOFORD GT52N10D5 N-Channel Enhancement Mode Power MOSFET Description The GT52N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features ⚫ VDS ⚫ ID (at VGS = 10V) ⚫ RDS(ON) (at VGS = 10V) 100V 71A < 7.5mΩ ⚫ RDS(ON) (at VGS = 4.
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