GT52N10 Overview
The GT52N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | GT52N10 |
|---|---|
| Datasheet | GT52N10 GT52N10T Datasheet (PDF) |
| File Size | 0.96 MB |
| Manufacturer | GOFORD |
| Description | TO-220 N-Channel Enhancement Mode Power MOSFET |
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The GT52N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
| Part Number | Description |
|---|---|
| GT52N10 | N-Channel Enhancement Mode Power MOSFET |
| GT52N10D5 | N-Channel Enhancement Mode Power MOSFET |
| GT52N10T | N-Channel Enhancement Mode Power MOSFET |
| GT55N06 | N-Channel Enhancement Mode Power MOSFET |
| GT55N06D5 | N-Channel Enhancement Mode Power MOSFET |
| GT58N12 | MOSFET |