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GT52N10 Datasheet TO-220 N-Channel Enhancement Mode Power MOSFET

Manufacturer: GOFORD

Download the GT52N10 datasheet PDF. This datasheet also includes the GT52N10T variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (GT52N10T-GOFORD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number GT52N10
Manufacturer GOFORD
File Size 0.96 MB
Description TO-220 N-Channel Enhancement Mode Power MOSFET
Download GT52N10 Download (PDF)

General Description

The GT52N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

General

Overview

GT52N10T N-Channel Enhancement Mode Power MOSFET.

Key Features

  • l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 100V 70A < 9mΩ < 15mΩ l 100% Avalanche Tested l RoHS Compliant Schematic diagram.

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