GT6K2P10 Datasheet P-Channel Enhancement Mode Power MOSFET

Manufacturer: GOFORD

Download the GT6K2P10 datasheet PDF. This datasheet also includes the GT6K2P10IH variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

GT6K2P10 p-channel enhancement mode power mosfet by GOFORD - Datasheet Preview — Note: The manufacturer provides a single datasheet file (GT6K2P10IH-GOFORD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	GT6K2P10
Manufacturer	GOFORD
File Size	856.39 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	GT6K2P10 Datasheet

General Description

The GT6K2P10IH uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

General

Overview

GT6K2P10IH P-Channel Enhancement Mode Power MOSFET.

Key Features

l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l 100% Avalanche Tested l RoHS Compliant -100V -1A < 670mΩ Schematic diagram.

More Datasheets from GOFORD

Part Number	Description
GT6K2P10IH	P-Channel Enhancement Mode Power MOSFET