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GT6K2P10 - P-Channel Enhancement Mode Power MOSFET

This page provides the datasheet information for the GT6K2P10, a member of the GT6K2P10IH P-Channel Enhancement Mode Power MOSFET family.

Description

provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Features

  • l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l 100% Avalanche Tested l RoHS Compliant -100V -1A < 670mΩ Schematic diagram.

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Datasheet preview – GT6K2P10

Datasheet Details

Part number GT6K2P10
Manufacturer GOFORD
File Size 856.39 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet GT6K2P10 Datasheet
Additional preview pages of the GT6K2P10 datasheet.

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Other Datasheets by GOFORD
  • GT6K2P10IH - P-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

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GT6K2P10IH P-Channel Enhancement Mode Power MOSFET Description The GT6K2P10IH uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
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