GT6K2P10IH Overview
The GT6K2P10IH uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
GT6K2P10IH Key Features
- 100V -1A < 670mΩ
Datasheet Details
| Part number | GT6K2P10IH |
|---|---|
| Datasheet | GT6K2P10IH-GOFORD.pdf |
| File Size | 856.39 KB |
| Manufacturer | GOFORD |
| Description | P-Channel Enhancement Mode Power MOSFET |
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