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GT6K2P10IH Datasheet P-Channel Enhancement Mode Power MOSFET

Manufacturer: GOFORD

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Datasheet Details

Part number GT6K2P10IH
Manufacturer GOFORD
File Size 856.39 KB
Description P-Channel Enhancement Mode Power MOSFET
Download GT6K2P10IH Download (PDF)

General Description

The GT6K2P10IH uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

General

Overview

GT6K2P10IH P-Channel Enhancement Mode Power MOSFET.

Key Features

  • l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l 100% Avalanche Tested l RoHS Compliant -100V -1A < 670mΩ Schematic diagram.

More Datasheets from GOFORD

Part Number Description
GT6K2P10 P-Channel Enhancement Mode Power MOSFET