Datasheet4U Logo Datasheet4U.com

GT6K2P10IH - P-Channel Enhancement Mode Power MOSFET

Description

provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Features

  • l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l 100% Avalanche Tested l RoHS Compliant -100V -1A < 670mΩ Schematic diagram.

📥 Download Datasheet

Datasheet preview – GT6K2P10IH

Datasheet Details

Part number GT6K2P10IH
Manufacturer GOFORD
File Size 856.39 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet GT6K2P10IH Datasheet
Additional preview pages of the GT6K2P10IH datasheet.

📁 Similar Datasheet

  • GT600HF65T9H - IGBT (NJSME)
  • GT605G - 6 Amp Glass Passivated Quick Connect Rectifier (TAITRON)
  • GT60J321 - Silicon N-Channel IGBT (Toshiba)
  • GT60J322 - Silicon N-Channel IGBT (Toshiba Semiconductor)
  • GT60J323 - Silicon N-Channel IGBT (Toshiba Semiconductor)
  • GT60J323H - Silicon N-Channel IGBT (Toshiba)
  • GT60M101 - Insulated Gate Bipolar Transistor (ETC)
  • GT60M104 - Silicon N-Channel IGBT (Toshiba Semiconductor)
  • GT60M301 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • GT60M302 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
Other Datasheets by GOFORD
  • GT6K2P10 - P-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

Click to expand full text
GT6K2P10IH P-Channel Enhancement Mode Power MOSFET Description The GT6K2P10IH uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
Published: |