GT700P08D3 - P-Channel Enhancement Mode Power MOSFET

General Description

provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Key Features

l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l 100% Avalanche Tested l RoHS Compliant -80V -16A < 75mΩ Schematic diagram.

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GT700P08D3 p-channel enhancement mode power mosfet by GOFORD - Datasheet Preview

Datasheet Details

Part number	GT700P08D3
Manufacturer	GOFORD
File Size	647.62 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	GT700P08D3 Datasheet

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Other Datasheets by GOFORD

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GT700P08	P-Channel Enhancement Mode Power MOSFET
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GT700P08D3 P-Channel Enhancement Mode Power MOSFET Description The GT700P08D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.