GT800N10 Overview
The GT800N10L uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
Datasheet Details
| Part number | GT800N10 |
|---|---|
| Datasheet | GT800N10 GT800N10L Datasheet (PDF) |
| File Size | 787.83 KB |
| Manufacturer | GOFORD |
| Description | N-Channel Enhancement Mode Power MOSFET |
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