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GT800N10L - N-Channel Enhancement Mode Power MOSFET

Description

provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Features

  • l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 100V 3.5A < 80mΩ < 90mΩ l 100% Avalanche Tested l RoHS Compliant Schematic diagram.

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Datasheet preview – GT800N10L

Datasheet Details

Part number GT800N10L
Manufacturer GOFORD
File Size 787.83 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet GT800N10L Datasheet
Additional preview pages of the GT800N10L datasheet.

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Full PDF Text Transcription

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GT800N10L N-Channel Enhancement Mode Power MOSFET Description The GT800N10L uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 100V 3.
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