GSF0206 Description
The GSF0206 utilizes the latest techniques to achieve high cell densit and lo on-resistance. These eatures ma e this device e tremel e icient and reliable or use in high e icienc s itch mode po er suppl and a ide variet o other applications. 5 Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous(TC=25°C) Drain Current-Continuous(TC=100°C) Drain Current-Pulsed1 Power Dissipation(TC=25°C) Power...
GSF0206 Key Features
- Advanced MOSFET process technology
- Ideal for high efficiency switched mode power supplies
- Low on-resistance with low gate charge
- Fast switching and reverse body recovery