GSFR0603 Datasheet | Good-Ark Semiconductor

- 6)5 60V P-Channel MOSFET Main Product Characteristics BVDSS RDS(ON) -60V 96mΩ -3.3A DS D Features and Benefits SOT-23-6L - $GYDQFHG026)(7SURFHVVWHF KQRORJ - ,GHDOIRU0%9- $9FRUHORDGVZLWFK32/DQG/('DSSOLFDWLRQV - /RZRQUHVLVWDQFHZLWKORZJDWHFKDUJH - )DVWVZLWFKLQJDQGUHYHUVHERGUHFRYHU Schematic Diagram 'HVFULSWLRQ The GSFR0603 utilizes the latest techniques to achieve high cell density and low on-resistance. These Features make this device extremely efficient and reliable for use in high efficiency switch mode power supply and a wide variety of other applications. $EVROXWH0D[LPXP5DWLQJV7& - &XQOHVVRWKHUZLVHVSHFLILHG Parameter Symbol Max. Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous (TA=25°C) Drain Current-Continuous (TA=70°C) Drain Current-Pulsed1 Single Pulse Avalanche Energy2 Single Pulse Avalanche Current2 Power Dissipation (TA=25°C) Power Dissipation-Derate Above 25°C -60 ±20 -3.3 ID -2.6 -13.2 -18 2 PD Thermal Resistance, Junction-to-Ambient Storage Temperature Range Operating Junction Temperature Range RθJA TSTG TJ...