LL103B Datasheet | Good-Ark Semiconductor

Features For general purpose applications The LL103A, B, C series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. Other applications are click suppression, efficient full wave bridges in telephone subsets, and blocking diodes in rechargeable low voltage battery systems. These diodes are also available in the DO-35 case with type designations SD103A thru SD103C. Mechanical Data Case: Mini MELF Glass Case (SOD-80) Weight: approx. 0.05g Cathode Band Color: Green LL103A thru LL103C Small-Signal Diode Schottky Diodes Maximum Ratings and Thermal Characteristics (Ratings at 25o C ambient temperature unless otherwise specified.) Parameter Symbol Value Peak inverse voltage LL103A LL103B LL103C Power dissipation (Infinite heatsink) TC=3/8" from body derates at 4m W/o C to 0 at 125o C Single cycle surge 60-Hz sine wave Junction temperature Storage temperature range V RRM Ptot IFSM Tj TS 40 30 20 400 (1) -55 to +150 Unit Volts m W Amps o C o C Electrical Characteristics (TJ=25o C unless otherwise noted.) Parameter Symbol Test Condition Leakage current Forward voltage drop LL103A LL103B LL103C IR VF VR=30V VR=20V VR=10V IF=20m A IF=200m A Junction capacitance Ctot VR=0V, f=1MHz Reverse recovery time trr IF=IR=50m A to 200m A, recover to 0.1IR Notes: 1. Valid provided that electrodes are kept at ambient...