LL103B Datasheet | General Semiconductor

FEATURES - For general purpose applications. - The LL103A, B, C is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. ∅ .063 (1.6) .055 (1.4) Cathode Mark - The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. Other applications are click suppression, efficient full wave bridges in telephone subsets, and blocking diodes in rechargeable low voltage battery systems. the type designation SD103A, B, C, and in the SOD-123 case with type designation SD103AW, SD103BW, SD103CW. .142 (3.6) .134 (3.4) .019 (0.48) .011 (0.28) - This diode is also available in DO-35 case with Dimensions in inches and (millimeters) MECHANICAL DATA Case: Mini MELF Glass Case SOD-80C Weight: approx. 0.05 g MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Peak Inverse Voltage LL103A LL103B LL103C VRRM VRRM VRRM Ptot Value 40 30 20 4001) Unit V V V m W Power Dissipation (Infinite Heatsink) TC = 3/8″ from Body derates at 4 m W/°C to 0 at 125 °C Junction Temperature Storage Temperature Range Single Cycle Surge 60-Hz Sine Wave 1) Tj TS IFSM - 55 to +150 15 °C °C A Valid provided that electrodes are kept at ambient temperature. 4/98 LL103A THRU LL103C ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Leakage Current at VR = 30 V at VR = 20 V at VR = 10 V Forward Voltage Drop at IF = 20 m A at IF = 200 m A Junction Capacitance at VR = 0 V, f = 1 MHz Reverse Recovery Time at IF = IR = 50 m A to 200 m A, recover to 0.1 IR LL103A LL103B LL103C IR IR IR VF VF Ctot trr Min. - - - - - - - Typ. - - - - - 50 10 Max. 5 5 5 0.37 0.6 - -...