MMBTA14 Datasheet | Good-Ark Semiconductor

eat res - Darlington Amplifier A sol te a im m atings 2） !"#"$%&%# !"##$%&"'()- +$,-"#&- .$ !"##$%&"'(234&&$',-"#&- .$ 234&&$'()- +$,-"#&- .$ !"##$%&"',!6''$7&,(!"7&476"6+ !"##$%&"',;"<$',=4++4>- &4"7 @A$'3- #,B$+4+&- 7%$,C'"3,D67%&4"7,&",:3E4$7& D67%&4"7,@$3>$'- &6'$ J&"'- .$,@$3>$'- &6'$ '($)- + -!)/ -!2/ -2)/ 8! ;! BFD: @D @+&. ,"+-% 01 01 51 190 011 G5H (II to +5I1 (II to +5I1 MMBTA14 NPN Transistor 1. BASE 2. EMITTER 3. COLLECTOR ./0& : 3? °C/W °C °C 1 SOT-23 lectrical Characteristics (TA=25°C unless otherwise noted） Parameter Symbol Test Conditions Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage V(BR)CBO V(BR)CEO IC= 100μA,IE=0 IC= 100 A, IB=0 Emitter-Base Breakdown Voltage Collector Cut-off Current V(BR)EBO ICBO- IE= 100 A, IC=0 CB=30 V, IE=0 Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage IEBO- h FE(1) - h FE( ) - VCE (sat)- VBE (sat) - EB= 10V ,IC=0 VCE=5V, IC= 10m A VCE=5V,...