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SSF11NS65 - 650V N-Channel MOSFET

Download the SSF11NS65 datasheet PDF. This datasheet also covers the SSF11NS65-GOOD variant, as both devices belong to the same 650v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The SSF11NS65 series MOSFET is a new technology.

which combines an innovative super junction technology and advance process.

This new technology achieves low RDS(ON), energy saving, high reliability and uniformity, superior power density and space saving.

Key Features

  • High dv/dt and avalanche capabilities.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.
  • Lead free product TO-220 SSF11NS65 650V N-Channel MOSFET Marking and Pin Assignment Schematic Diagram.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SSF11NS65-GOOD-ARK.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SSF11NS65
Manufacturer GOOD-ARK
File Size 690.34 KB
Description 650V N-Channel MOSFET
Datasheet download datasheet SSF11NS65 Datasheet

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Other Datasheets by GOOD-ARK

Part Number Description
SSF11NS60 600V N-Channel MOSFET
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SSF10N65 650V N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Main Product Characteristics VDSS 650V RDS(on) 0.36ohm(typ.) ID 11A Features and Benefits  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance  Lead free product TO-220 SSF11NS65 650V N-Channel MOSFET Marking and Pin Assignment Schematic Diagram Description The SSF11NS65 series MOSFET is a new technology. which combines an innovative super junction technology and advance process. This new technology achieves low RDS(ON), energy saving, high reliability and uniformity, superior power density and space saving.