SSF11NS65UD Description
The SSF11NS65UD series MOSFETs is a new technology, which bines an innovative technology and advance process. This new technology achieves low Rdson, energy saving, high reliability and uniformity, superior power density and space saving. Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain...
SSF11NS65UD Key Features
- High dv/dt and avalanche capabilities
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- 55 to +150
- 0.33 0.74
- 22 4.3 8 11 6 29 6 808 34 3.1
- 1 50 100
- Max. 11
- 0.82 1.2