SSF11NS60D - N-Channel MOSFET

GOOD-ARK

Download the SSF11NS60D datasheet PDF. This datasheet also covers the SSF11NS60D-GOOD variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The SSF11NS60D series MOSFET is a new technology, which combines an innovative super junction technology and advance process.

This new technology achieves low RDS(ON), energy saving, high reliability and uniformity, superior power density and space saving.

Key Features

High dv/dt and avalanche capabilities.
100% avalanche tested.
Low input capacitance and gate charge.
Low gate input resistance.
Lead free product TO-252 Marking and Pin Assignment Schematic Diagram.

📥 Download Datasheet

SSF11NS60D n-channel mosfet by GOOD-ARK - Datasheet Preview — Note: The manufacturer provides a single datasheet file (SSF11NS60D-GOOD-ARK.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	SSF11NS60D
Manufacturer	GOOD-ARK
File Size	702.98 KB
Description	N-Channel MOSFET
Datasheet	SSF11NS60D Datasheet

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Other Datasheets by GOOD-ARK

Part Number	Description
SSF11NS60	600V N-Channel MOSFET
SSF11NS65	650V N-Channel MOSFET
SSF1020D	100V N-Channel MOSFET
SSF1090	100V N-Channel MOSFET
SSF10N65	650V N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Main Product Characteristics SSF11NS60D 600V N-Channel MOSFET VDSS RDS(on) ID 600V 0.36Ω (typ.) 11A Features and Benefits  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance  Lead free product TO-252 Marking and Pin Assignment Schematic Diagram Description The SSF11NS60D series MOSFET is a new technology, which combines an innovative super junction technology and advance process. This new technology achieves low RDS(ON), energy saving, high reliability and uniformity, superior power density and space saving.