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SSF2318E - 20V N-Channel MOSFET

Download the SSF2318E datasheet PDF. This datasheet also covers the SSF2318E-GOOD variant, as both devices belong to the same 20v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The SSF2318E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operate with gate voltages as low as 2.5V.

Key Features

  • VDS = 20V,ID =6.5A RDS(ON) < 34mΩ @ VGS=1.8V RDS(ON) < 26mΩ @ VGS=2.5V RDS(ON) < 22mΩ @ VGS=4.5V ESD Rating：2000V HBM.
  • High Power and Current Handling Capability.
  • Lead Free.
  • Surface Mount Package Schematic Diagram Marking and Pin Assignment.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SSF2318E-GOOD-ARK.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SSF2318E
Manufacturer GOOD-ARK
File Size 397.62 KB
Description 20V N-Channel MOSFET
Datasheet download datasheet SSF2318E Datasheet

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Other Datasheets by GOOD-ARK

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DESCRIPTION The SSF2318E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operate with gate voltages as low as 2.5V. SSF2318E 20V N-Channel MOSFET FEATURES ● VDS = 20V,ID =6.5A RDS(ON) < 34mΩ @ VGS=1.8V RDS(ON) < 26mΩ @ VGS=2.5V RDS(ON) < 22mΩ @ VGS=4.