SSF2318E
Overview
The SSF2318E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operate with gate voltages as low as 2.5V. SSF2318E 20V N-Channel MOSFET.
- VDS = 20V,ID =6.5A RDS(ON) < 34mΩ @ VGS=1.8V RDS(ON) < 26mΩ @ VGS=2.5V RDS(ON) < 22mΩ @ VGS=4.5V ESD Rating：2000V HBM
- High Power and Current Handling Capability
- Lead Free
- Surface Mount Package Schematic Diagram Marking and Pin Assignment
