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SSF2319GE - 20V P-Channel MOSFET

Download the SSF2319GE datasheet PDF. This datasheet also covers the SSF2319GE-GOOD variant, as both devices belong to the same 20v p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The SSF2319GE utilizes the latest processing techniques to achieve high cell density, low onresistance and high repetitive avalanche rating.

Key Features

  • SOT-723 3: Part Marking X: Year Y: Lot Marking and Pin Assignment Schematic Diagram.
  • Advanced trench MOSFET process technology.
  • Ideal for PWM, load switching and general power management.
  • Ultra low on-resistance with low gate charge.
  • Fast switching and reverse body recovery.
  • 150°C operating temperature.
  • Main.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SSF2319GE-GOOD-ARK.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SSF2319GE
Manufacturer GOOD-ARK
File Size 864.49 KB
Description 20V P-Channel MOSFET
Datasheet download datasheet SSF2319GE Datasheet

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Other Datasheets by GOOD-ARK

Part Number Description
SSF2318E 20V N-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Main Product Characteristics SSF2319GE 20V P-Channel MOSFET VDSS - 20V RDS(on) 440mΩ (typ.) ID - 400mA Features and Benefits SOT-723 3: Part Marking X: Year Y: Lot Marking and Pin Assignment Schematic Diagram  Advanced trench MOSFET process technology  Ideal for PWM, load switching and general power management  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150°C operating temperature  Main applications: notebooks, load switching, battery protection, hand-held instruments. Description The SSF2319GE utilizes the latest processing techniques to achieve high cell density, low onresistance and high repetitive avalanche rating.