SSF2814E
Overview
The SSF2814E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. SSF2814E 20V Dual N-Channel MOSFET GENERAL FEATURES VDS = 20V,ID = 7A RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 22mΩ @ VGS=4V RDS(ON) < 20mΩ @ VGS=4.5V ESD Rating：2000V HBM High Power and current handing capability Lead free product Surface Mount Package Schematic Diagram.
- VDS = 20V,ID = 7A RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 22mΩ @ VGS=4V RDS(ON) < 20mΩ @ VGS=4.5V ESD Rating：2000V HBM
- High Power and current handing capability
- Lead free product
- Surface Mount Package Schematic Diagram Marking and Pin Assignment
