Datasheet Summary
DESCRIPTION
The SSF2816EB uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.75V.
20V Dual N-Channel MOSFET
GENERAL Features
- VDS = 20V,ID = 7A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 23mΩ @ VGS=4V RDS(ON) < 22mΩ @ VGS=4.5V
ESD Rating：2500V HBM
- High Power and current handling capability
- Lead free product
- Surface Mount Package
Schematic Diagram Marking and Pin Assignment
APPLICATIONS
- Battery protection
- Load switch
- Power management
TSSOP-8 Top View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
TSSOP-8
Ø330m...
