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SSF2N60 Datasheet 600v N-channel MOSFET

Manufacturer: GOOD-ARK

Overview: Main Product Characteristics VDSS 600V RDS(on) 3.6ohm(typ.) ID.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

These N-Channel enhancement mode power field effect transistors are produced using proprietary MOSFET technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

These devices are well suited for high efficiency switch mode power supplies.

Key Features

  • TO-220.
  • Advanced Process Technology.
  • Special designed for PWM, load switching and general purpose.

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