SSF2N60 Description
These N-Channel enhancement mode power field effect transistors are produced using proprietary MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supplies.
SSF2N60 Key Features
- Advanced Process Technology
- Special designed for PWM, load switching and
SSF2N60 Applications
- Ultra low on-resistance with low gate charge