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SSF2N60 Datasheet N-channel Enhancement Mode Power Field Effect Transistors

Manufacturer: Silikron

Overview:                                  SSF2N60  Main Product Characteristics: VDSS 600V RDS(on) ID 3.6ohm(typ.

Datasheet Details

Part number SSF2N60
Manufacturer Silikron
File Size 516.60 KB
Description N-Channel enhancement mode power field effect transistors
Datasheet SSF2N60-Silikron.pdf

General Description

: These N-Ch annel en hancement mode power field ef fect transistors are produced usin g silikron proprietary MOSFET te chnology.

T his advance d technology has be en especially tailored t o minimize on-state resistance, provide superior switching performance, and withstand high ene rgy pulse in the avala nche and mutation mode.

T hese devices are well suited for high ef ficiency switch mode power supplies Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS Drain-S VGS EAS IAS TJ TSTG Parameter Max.

Key Features

  • Advanced Process Technology.
  • Special designed for PWM, load switching dan gene ral pur pose.

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