SSF3056C Datasheet | Good-Ark Semiconductor

Features and Benefits - Advanced trench MOSFET process technology - Special designed for buck-boost circuit, DSC, portable devices and general purpose applications - Ultra low on-resistance with low gate charge - 150℃ operating temperature - Lead free product Description It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features bine to make this design an extremely efficient and reliable device for use in buck-boost circuit, DSC, portable devices and a wide variety of others applications. Absolute Max Rating Symbol Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS TJ TSTG Continuous Drain Current, VGS @ 4.5V① Continuous Drain Current, VGS @ 4.5V① Pulsed Drain Current② Power Dissipation③ Drain-Source Voltage Gate-to-Source Voltage Operating Junction and Storage Temperature Range Max. N-channel P-channel 5 -4.5 4.2 -3.4 18.8 -12.5 2.1 1.8 30 -30 ± 12 ± 12 -55 to + 150 -55 to + 150 Units W V V °C .goodark. Page 1 of 5 Rev.1.0 30V plementary MOSFET (Preliminary) Thermal Resistance Symbol Characteristics Junction-to-ambient (t ≤ 10s) ④ RθJA Junction-to-Ambient (PCB mounted, steady-state) ④ Typ. - Max. N-channel P-channel 60 95 - 40 Units ℃/W ℃/W Electrical Characteristics @TA=25℃ unless otherwise specified Symbol Parameter Drain-to-Source V(BR)DSS breakdown voltage RDS(on) Static Drain-to-Source on-resistance VGS(th) Gate threshold...