Datasheet4U Logo Datasheet4U.com

SSF3056C - MOSFET

General Description

It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

Key Features

  • -4.5A DFN2X3-8L Bottom View.
  • Advanced trench MOSFET process technology.
  • Special designed for buck-boost circuit, DSC, portable devices and general purpose.

📥 Download Datasheet

Datasheet Details

Part number SSF3056C
Manufacturer Silikron Semiconductor
File Size 432.21 KB
Description MOSFET
Datasheet download datasheet SSF3056C Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SSF3056C MOSFET GOOD-ARK
SSF3051G7 P-Channel MOSFET GOOD-ARK
SSF3002EG1 MOSFET Silikron
SSF3006DB MOSFET Silikron
SSF3006DBC MOSFET Silikron

Other Datasheets by Silikron Semiconductor

Part Number Description
SSF3051G7 MOSFET
SSF3055 MOSFET
SSF3036C MOSFET
SSF3314E MOSFET
SSF3322 MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Main Product Characteristics: NMOS PMOS VDSS 30V -30V RDS(on) 37mohm(typ.) 68mohm(typ.) D1 NMOS S1 D1 G1 D2 S2 PMOS D2 G2 ID 5A Features and Benefits: -4.5A DFN2X3-8L Bottom View  Advanced trench MOSFET process technology  Special designed for buck-boost circuit, DSC, portable devices and general purpose applications  Ultra low on-resistance with low gate charge  150℃ operating temperature SSF3056C Schematic diagram Description: It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.