SSF3055 Datasheet | Silikron Semiconductor

DESCRIPTION The SSF3055 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES - VDS = 25V,ID = 12A RDS(ON) < 120mΩ @ VGS=5V RDS(ON) < 90mΩ @ VGS=10V - High Power and current handing capability - Lead free product is acquired - Surface Mount Package Application - Battery protection - Load switch - Power management Schematic diagram 3S 2D 1G Marking and pin Assignment TO-252(DPAK) top view PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size To-252(DPAK) - Tape width - Quantity - ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Drain-Source Voltage Gate-Source Voltage Parameter Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD TJ,TSTG THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current BVDSS IDSS VGS=0V ID=250µA...