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SSF3314E Datasheet N-channel MOSFET

Manufacturer: GOOD-ARK

Overview: DESCRIPTION The SSF3314E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The SSF3314E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating.

It is ESD protected.

This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its mon-drain configuration.

Key Features

  • VDS = 30V,ID = 8A RDS(ON) < 39mΩ @ VGS=2.5V RDS(ON) < 28mΩ @ VGS=3.1V RDS(ON) < 24mΩ @ VGS=4.0V RDS(ON) < 23mΩ @ VGS=4.5V RDS(ON) < 18mΩ @ VGS=10V ESD Rating：2000V HBM.
  • High Power and current handing capability.
  • Lead free product.
  • Surface Mount Package SSF3314E 30V N-Channel MOSFET Schematic Diagram Pin Assignment DFN3×3-8L Bottom View.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Silikron Semiconductor Logo SSF3314E MOSFET Silikron Semiconductor

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SSF3314E Distributor