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SSF3314E - N-Channel MOSFET

Download the SSF3314E datasheet PDF. This datasheet also covers the SSF3314E-GOOD variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The SSF3314E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating.

It is ESD protected.

Key Features

  • VDS = 30V,ID = 8A RDS(ON) < 39mΩ @ VGS=2.5V RDS(ON) < 28mΩ @ VGS=3.1V RDS(ON) < 24mΩ @ VGS=4.0V RDS(ON) < 23mΩ @ VGS=4.5V RDS(ON) < 18mΩ @ VGS=10V ESD Rating：2000V HBM.
  • High Power and current handing capability.
  • Lead free product.
  • Surface Mount Package SSF3314E 30V N-Channel MOSFET Schematic Diagram Pin Assignment DFN3×3-8L Bottom View.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SSF3314E-GOOD-ARK.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SSF3314E
Manufacturer GOOD-ARK
File Size 318.97 KB
Description N-Channel MOSFET
Datasheet download datasheet SSF3314E Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DESCRIPTION The SSF3314E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. GENERAL FEATURES ● VDS = 30V,ID = 8A RDS(ON) < 39mΩ @ VGS=2.5V RDS(ON) < 28mΩ @ VGS=3.1V RDS(ON) < 24mΩ @ VGS=4.0V RDS(ON) < 23mΩ @ VGS=4.