SSF3314E Datasheet | Silikron Semiconductor

DESCRIPTION The SSF3314E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its mon-drain configuration. GENERAL FEATURES - VDS = 30V,ID = 8A RDS(ON) < 39mΩ @ VGS=2.5V RDS(ON) < 28mΩ @ VGS=3.1V RDS(ON) < 24mΩ @ VGS=4.0V RDS(ON) < 23mΩ @ VGS=4.5V RDS(ON) < 18mΩ @ VGS=10V ESD Rating：2000V HBM - High Power and current handing capability - Lead free product is acquired - Surface Mount Package Schematic diagram Pin Assignment DFN3×3-8L BOTTOM VIEW PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size DFN3×3-8L - Tape width - Quantity - ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous@ Current-Pulsed (Note 1) ID IDM Maximum Power Dissipation Operating Junction and Storage Temperature Range TJ,TSTG Limit 30 ±12 8 45 1.7 -55 To 150 Unit V V A A W ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 40 ℃/W ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise...