SSF3611E Datasheet | Good-Ark Semiconductor

Features and Benefits SOP-8 - Advanced trench MOSFET process technology - Special designed for PWM, load switching and general purpose applications - Ultra low on-resistance with low gate charge - Fast switching and reverse body recovery - 150℃ operating temperature - Lead free product 30V P-Channel MOSFET Marking and Pin Assignment Schematic Diagram Description It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features bine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute Max Rating Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Drain-Source Voltage Gate-to-Source Voltage Operating Junction and Storage Temperature Range Max. -12 -7.4 -48 2 -30 ± 20 -55 to +150 Units W V V °C Thermal Resistance Symbol RθJA Characteristics Junction-to-ambient (t ≤ 10s) ④ Typ. - Max. 62.5 Units ℃/W .goodark. Page 1 of 5 Rev.1.0 30V P-Channel MOSFET Electrical Characteristics @TA=25℃ unless otherwise specified Symbol V(BR)DSS RDS(on) VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source breakdown voltage Static Drain-to-Source on-resistance Gate threshold voltage Drain-to-Source leakage current Gate-to-Source forward...