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SSF3611E - MOSFET

General Description

It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

Key Features

  • SOP-8 .
  • Advanced trench MOSFET process technology.
  • Special designed for PWM, load switching and general purpose.

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Datasheet Details

Part number SSF3611E
Manufacturer Silikron Semiconductor
File Size 293.32 KB
Description MOSFET
Datasheet download datasheet SSF3611E Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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                                 Main Product Characteristics: VDSS -30 V RDS(on) 10.6 mΩ(typ.) ID -12A Features and Benefits: SOP-8  „ Advanced trench MOSFET process technology „ Special designed for PWM, load switching and general purpose applications „ Ultra low on-resistance with low gate charge „ Fast switching and reverse body recovery „ 150℃ operating temperature SSF3611E    Marking and pin Assignment  Schematic diagram        Description: It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.