SSF3912S Datasheet | Good-Ark Semiconductor

Features and Benefits - Advanced MOSFET process technology - Ideal for MB/VGA/Vcore and load switch - Low on-resistance with low gate charge - Fast switching and reverse body recovery 30V N-Channel MOSFET S G SOT-23 S Schematic Diagram Description The SSF3912S utilizes the latest techniques to achieve high cell density and low on-resistance. These features make this device extremely efficient and reliable for use in high efficiency switch mode power supply and a wide variety of other applications. Absolute Maximum Ratings (TC=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous (TC=25°C) Drain Current - Continuous (TC=100°C) Drain Current - Pulsed1 Single Pulse Avalanche Energy2 Single Pulse Avalanche Current2 Power Dissipation (TC=25°C) Power Dissipation - Derate above 25°C Storage Temperature Range Operating Junction Temperature Range Symbol VDS VGS IDM EAS IAS PD PD TSTG TJ Value 30 ±20 6.5 4.1 26 32 8 1.56 0.012 -55 to +150 -55 to +150 Unit V V A A A m J A W W/°C °C °C Thermal Characteristics Parameter Symbol Typ. Thermal Resistance Junction to Ambient RθJA --- Max. 80 Unit °C/W 1/5 30V N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise specified) Parameter...