SSF5510G Overview
Description
The SSF5510G is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability.
Key Features
- Advanced trench process technology
- Ultra low Rdson, typical 8mohm
- High avalanche energy, 100% test
- Fully characterized avalanche voltage and current
- Lead free product ID =56A BV=55V R DS (ON) =8mohm （typ.）
