SSF5510G Description
The SSF5510G is a new generation of middle voltage and high current N Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SS5510G is assembled in high reliability and qualified assembly house.
SSF5510G Key Features
- Advanced trench process technology
- Ultra low Rdson, typical 8mohm
- High avalanche energy, 100% test
- Fully characterized avalanche voltage and current
- Lead free product