SSF5510G Datasheet | Good-Ark Semiconductor

FEATURES - Advanced trench process technology - Ultra low Rdson, typical 8mohm - High avalanche energy, 100% test - Fully characterized avalanche voltage and current - Lead free product ID =56A BV=55V R DS (ON) =8mohm （typ.） DESCRIPTION The SSF5510G is a new generation of middle voltage and high current N- Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SS5510G is assembled in high reliability and qualified assembly house. APPLICATIONS - Power switching application SSF5510G Top View Absolute Maximum Ratings Parameter ID@Tc=25ْ C Continuous drain current,VGS@10V ID@Tc=100Cْ Continuous drain current,VGS@10V IDM Pulsed drain current ① Power dissipation PD@TC=25ْC Linear derating factor VGS Gate-to-Source voltage dv/dt Peak diode recovery voltage EAS EAR TJ TSTG Single pulse avalanche energy ② Repetitive avalanche energy Operating Junction...