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SSF5510G - N-Channel MOSFET

This page provides the datasheet information for the SSF5510G, a member of the SSF5510G-GOOD N-Channel MOSFET family.

Description

The SSF5510G is a new generation of middle voltage and high current N

Channel enhancement mode trench power MOSFET.

This new technology increases the device reliability and electrical parameter repeatability.

SS5510G is assembled in high reliability and qualified assembly house.

Features

  • Advanced trench process technology.
  • Ultra low Rdson, typical 8mohm.
  • High avalanche energy, 100% test.
  • Fully characterized avalanche voltage and current.
  • Lead free product ID =56A BV=55V R DS (ON) =8mohm （typ. ）.

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Datasheet preview – SSF5510G

Datasheet Details

Part number SSF5510G
Manufacturer GOOD-ARK
File Size 475.93 KB
Description N-Channel MOSFET
Datasheet download datasheet SSF5510G Datasheet
Additional preview pages of the SSF5510G datasheet.

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Full PDF Text Transcription

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SSF5510G Preliminary FEATURES  Advanced trench process technology  Ultra low Rdson, typical 8mohm  High avalanche energy, 100% test  Fully characterized avalanche voltage and current  Lead free product ID =56A BV=55V R DS (ON) =8mohm （typ.） DESCRIPTION The SSF5510G is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SS5510G is assembled in high reliability and qualified assembly house.
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