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SSF7NS65G Datasheet 650v N-channel MOSFET

Manufacturer: GOOD-ARK

Overview: Main Product Characteristics VDSS RDS(on) ID 650V 0.58Ω (typ.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The SSF7NS65G series MOSFET is a new technology, which bines an innovative super junction technology and advance process.

This new technology achieves low RDS(ON), energy saving, high reliability and uniformity, superior power density and space saving.

Absolute Max Rating Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAR TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current ② Power Dissipation ③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=15.2mH Avalanche Current @ L=15.2mH Operating Junction and Storage Temperature Range Max.

Key Features

  • High dv/dt and avalanche capabilities.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.
  • Lead free product TO-251 SSF7NS65G 650V N-Channel MOSFET Marking and Pin Assignment Schematic Diagram.

SSF7NS65G Distributor