SSFT3906 Datasheet | Good-Ark Semiconductor

Features and Benefits TO-220 - Advanced trench MOSFET process technology - Special designed for PWM, load switching and general purpose applications - Ultra low on-resistance with low gate charge - Fast switching and reverse body recovery - 175℃ operating temperature - Lead free product 30V N-Channel MOSFET Marking and Pin Assignment Schematic Diagram Description It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features bine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute Max Rating Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=0.3m H Avalanche Current @ L=0.3m H Operating Junction and Storage Temperature Range Max. 90 60 180 91 0.61 30 ± 20 304 45 -55 to + 175 Units W W/°C V V m J A °C .goodark. Page 1 of 6 Rev.2.0 30V N-Channel MOSFET Thermal Resistance Symbol RθJC RθJA Characteristics Junction-to-case③ Junction-to-ambient (t ≤ 10s) ④ Junction-to-Ambient (PCB mounted, steady-state) ④ Typ. - - - Max. 1.65 62 40 Units ℃/W ℃/W ℃/W Electrical Characteristics @TA=25℃ unless otherwise specified Symbol V(BR)DSS Parameter Drain-to-Source breakdown voltage RDS(on)...