SSFT3906 Datasheet | Silikron Semiconductor

Features and Benefits: TO220  - Advanced trench MOSFET process technology - Special designed for PWM, load switching and general purpose applications - Ultra low on-resistance with low gate charge - Fast switching and reverse body recovery - 175℃ operating temperature SSFT3906  Marking and pin Assignment  Schematic diagram  Description : It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features bine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications  Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=0.3m H Avalanche Current @ L=0.3m H Operating Junction and Storage Temperature Range Max. 90 60 180 91 0.61 30 ± 20 304 45 -55 to + 175 Units W W/°C V V m J A °C ©Silikron Semiconductor CO.,LTD. 2011.08.08 .silikron.  Version : 2.0 page 1 of 7                                  SSFT3906  Thermal Resistance Symbol RθJC Characterizes Junction-to-case③ Typ. - Max. 1.65 Units ℃/W RθJA Junction-to-ambient (t ≤ 10s) ④ - 62 ℃/W Junction-to-Ambient (PCB mounted, steady-state) ④ - 40...