Datasheet Summary
Main Product Characteristics
VDSS
60V
RDS(on) 34mΩ (typ.)
ID 38A Features and Benefits
TO-220
- Advanced Process Technology
- Special designed for PWM, load switching and general purpose applications
- Ultra low on-resistance with low gate charge
- Fast switching and reverse body recovery
- 175℃ operating temperature
- Lead free product
60V N-Channel MOSFET
Marking and Pin Assignment
Schematic Diagram
Description
These N-Channel enhancement mode power field effect transistors are produced using proprietary MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high...
