1SS181 Datasheet | Good-Ark Semiconductor

Features - 4.0n S; Fast Switching Device (TRR <4.0n S) - 150m W; Power Dissipation of 150m W - High Stability and High Reliability. - Low reverse leakage Mechanical Data - SOT-23,Small Outline Plastic Package. - Epoxy UL: 94V-0 - Mounting Position: Any Pb Ro HS PLIANT Marking : A3 Pin definition SOT-23 Epuivalent circuit Maximum Ratings & Thermal Characteristics(TA=25℃ unless otherwise noted) Parameters Reverse Voltage Peak Repetitive Reverse Voltage Power Dissipation Average Rectified Current Non-Repetitive Peak Forward Surge Current @t=8.3ms; TA=25℃ Operating junction temperature Storage temperature range Thermal Resistance from Junction to Ambient Valid provided that electrodes are kept at ambient temperature. Symbol VR VRRM PD IO IFSM TJ TS RθJA Value 80 85 150 100 150 -55-+150 Unit V V m W m A ℃ ℃ ℃/W Electrical Characteristics (TA=25℃ unless otherwise noted) Parameter Reverse Voltage Reverse Leakage Current Forward Voltage Reverse Recovery Time Capacitance Symbol V(BR) IR VF TRR CT Test Condition IR=100u A VR=80V VR=30V IF=1m A IF=10m A IF=100m A IF= IR=10m A VR=6V,RL=100 Ω IRR=0.1 X IR VR=0V, f=1MHZ Min 80 Limits Typ 0.61 0.74...