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Datasheet V2021.A.0
G5S12030PPM
1200V/30A Silicon Carbide Power Schottky Barrier Diode
Features
• Zero reverse recovery current • Zero forward recovery voltage • Temperature independent switching behavior • High temperature operation • High frequency operation
Benefits
• Unipolar rectifier • Substantially reduced switching losses • No thermal run-away with parallel devices • Reduced heat sink requirements
Applications
• SMPS, e.g., CCM PFC; • Motor drives, Solar application, UPS,
Wind turbine, Rail traction, EV/HEV
Key Characteristics
VRRM
1200 V
IF, Tc≤157℃
30 A
QC
159 nC
Part No.