G5S12030PPM
G5S12030PPM is 1200V/30A Silicon Carbide Power Schottky Barrier Diode manufactured by GPT.
Datasheet V2021.A.0
1200V/30A Silicon Carbide Power Schottky Barrier Diode
Features
- Zero reverse recovery current
- Zero forward recovery voltage
- Temperature independent switching behavior
- High temperature operation
- High frequency operation
Benefits
- Unipolar rectifier
- Substantially reduced switching losses
- No thermal run-away with parallel devices
- Reduced heat sink requirements
Applications
- SMPS, e.g., CCM PFC;
- Motor drives, Solar application, UPS,
Wind turbine, Rail traction, EV/HEV
Key Characteristics
VRRM
1200 V
IF, Tc≤157℃
30 A
159 n C
Part No. G5S12030PPM
Package Type TO-247AC
Marking G5S12030PPM
©2021 Global Power Technology pany Ltd
- ALL RIGHTS RESERVED
1200V/ 30A Silicon Carbide Power Schottky Barrier Diode
Maximum...
