Datasheet4U Logo Datasheet4U.com

G5S12030PPM - 1200V/30A Silicon Carbide Power Schottky Barrier Diode

Datasheet Summary

Features

  • Zero reverse recovery current.
  • Zero forward recovery voltage.
  • Temperature independent switching behavior.
  • High temperature operation.
  • High frequency operation Benefits.
  • Unipolar rectifier.
  • Substantially reduced switching losses.
  • No thermal run-away with parallel devices.
  • Reduced heat sink requirements.

📥 Download Datasheet

Datasheet preview – G5S12030PPM

Datasheet Details

Part number G5S12030PPM
Manufacturer GPT
File Size 1.08 MB
Description 1200V/30A Silicon Carbide Power Schottky Barrier Diode
Datasheet download datasheet G5S12030PPM Datasheet
Additional preview pages of the G5S12030PPM datasheet.
Other Datasheets by GPT

Full PDF Text Transcription

Click to expand full text
Datasheet V2021.A.0 G5S12030PPM 1200V/30A Silicon Carbide Power Schottky Barrier Diode Features • Zero reverse recovery current • Zero forward recovery voltage • Temperature independent switching behavior • High temperature operation • High frequency operation Benefits • Unipolar rectifier • Substantially reduced switching losses • No thermal run-away with parallel devices • Reduced heat sink requirements Applications • SMPS, e.g., CCM PFC; • Motor drives, Solar application, UPS, Wind turbine, Rail traction, EV/HEV Key Characteristics VRRM 1200 V IF, Tc≤157℃ 30 A QC 159 nC Part No.
Published: |