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GS8160E18DGT - 18Mb Sync Burst SRAMs

Description

Applications The GS8160E18/32/36DGT is an 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter.

Features

  • FT pin for user-configurable flow through or pipeline operation.
  • Dual Cycle Deselect (DCD) operation.
  • 2.5 V or 3.3 V +10%/.
  • 10% core power supply.
  • 2.5 V or 3.3 V I/O supply.
  • LBO pin for Linear or Interleaved Burst mode.
  • Internal input resistors on mode pins allow floating mode pins.
  • Default to Interleaved Pipeline mode.
  • Byte Write (BW) and/or Global Write (GW) operation.
  • Internal self-timed write cycle.

📥 Download Datasheet

Datasheet Details

Part number GS8160E18DGT
Manufacturer GSI Technology
File Size 237.67 KB
Description 18Mb Sync Burst SRAMs
Datasheet download datasheet GS8160E18DGT Datasheet

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Other Datasheets by GSI Technology

Part Number Description
GS8160E32DGT 18Mb Sync Burst SRAMs
GS8160E36DGT 18Mb Sync Burst SRAMs
GS816018BT-150 18Mb Sync Burst SRAMs
GS816018BT-200 18Mb Sync Burst SRAMs
GS816018BT-250 18Mb Sync Burst SRAMs

Full PDF Text Transcription

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GS8160E18/32/36DGT-400/375/333/250/200/150 100-Pin TQFP Commercial Temp Industrial Temp 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 400 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation • 2.5 V or 3.3 V +10%/–10% core power supply • 2.5 V or 3.
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