GS8160E32DGT Datasheet | GSI Technology

GS8160E18/32/36DGT-400/375/333/250/200/150 100-Pin TQFP mercial Temp Industrial Temp 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 400 MHz- 150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Features - FT pin for user-configurable flow through or pipeline operation - Dual Cycle Deselect (DCD) operation - 2.5 V or 3.3 V +10%/- 10% core power supply - 2.5 V or 3.3 V I/O supply - LBO pin for Linear or Interleaved Burst mode - Internal input resistors on mode pins allow floating mode pins - Default to Interleaved Pipeline mode - Byte Write (BW) and/or Global Write (GW) operation - Internal self-timed write cycle - Automatic power-down for portable applications - Ro HS-pliant 100-lead TQFP package available Functional Description Applications The GS8160E18/32/36DGT is an 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance...