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GS816118DGT-xxxV Datasheet 18mb Sync Burst Srams

Manufacturer: GSI Technology

Overview: GS8161xxD(GT/D)-xxxV 100-Pin TQFP & 165-Bump BGA mercial Temp Industrial Temp 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 333 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

Applications The GS8161xxD(GT/D)-xxxV is an 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter.

Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applicati

Key Features

  • IEEE 1149.1 JTAG-compatible Boundary Scan.
  • 1.8 V or 2.5 V core power supply.
  • 1.8 V or 2.5 V I/O supply.
  • LBO pin for Linear or Interleaved Burst mode.
  • Internal input resistors on mode pins allow floating mode pins.
  • Byte Write (BW) and/or Global Write (GW) operation.
  • Internal self-timed write cycle.
  • Automatic power-down for portable.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
GSI Logo GS816118 (GS816118 - GS816136) Sync Burst SRAMs GSI
GSI Logo GS816118B (GS816118B - GS816136B) Sync Burst SRAMs GSI

More Datasheets from GSI Technology

Part Number Description
GS816118DGD-xxxV 18Mb Sync Burst SRAMs
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GS816132DD-xxxV 18Mb Sync Burst SRAMs
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GS816136DD-xxxV 18Mb Sync Burst SRAMs
GS816136DGD-xxxV 18Mb Sync Burst SRAMs
GS816136DGT-xxxV 18Mb Sync Burst SRAMs
GS816136DT-xxxV 18Mb Sync Burst SRAMs
GS8161E18B (GS8161E18B - GS8161E36B) Sync Burst SRAMs

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