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GS820E32A - 64K x 32 / 2M Synchronous Burst SRAM

General Description

The GS820E32A is a 2,097,152 bit high performance synchronous SRAM with a 2 bit burst address counter.

Key Features

  • FT pin for user configurable flow through or pipelined operation.
  • Dual Cycle Deselect (DCD) Operation.
  • 3.3V +10%/-5% Core power supply.
  • 2.5V or 3.3V I/O supply.
  • LBO pin for linear or interleaved burst mode.
  • Internal input resistors on mode pins allow floating mode pins.
  • Default to Interleaved Pipelined Mode.
  • Byte write (BW) and/or global write (GW) operation.
  • Common data inputs and data outputs.
  • Cl.

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Datasheet Details

Part number GS820E32A
Manufacturer GSI Technology
File Size 344.70 KB
Description 64K x 32 / 2M Synchronous Burst SRAM
Datasheet download datasheet GS820E32A Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GS820E32AT/Q-150/138/133/117/100/66 TQFP, QFP Commercial Temp Industrial Temp Features • FT pin for user configurable flow through or pipelined operation. • Dual Cycle Deselect (DCD) Operation. • 3.3V +10%/-5% Core power supply • 2.5V or 3.3V I/O supply. • LBO pin for linear or interleaved burst mode. • Internal input resistors on mode pins allow floating mode pins. • Default to Interleaved Pipelined Mode. • Byte write (BW) and/or global write (GW) operation. • Common data inputs and data outputs. • Clock Control, registered, address, data, and control. • Internal Self-Timed Write cycle. • Automatic power-down for portable applications. • JEDEC standard 100-lead TQFP or QFP package. -150 Pipeline tCycle 6.6ns 3-1-1-1 tKQ 3.8ns IDD 270mA Flow tCycle 10.