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GS8256418GB-400 - 288Mb DCD Sync Burst SRAM

General Description

Applications The GS8256418/36 is a 301,989,888-bit high performance synchronous SRAM with a 2-bit burst address counter.

Key Features

  • FT pin for user-configurable flow through or pipeline operation.
  • Single/Dual Cycle Deselect selectable.
  • IEEE 1149.1 JTAG-compatible Boundary Scan.
  • ZQ mode pin for user-selectable high/low output drive.
  • 2.5 V +10%/.
  • 10% core power supply.
  • 3.3 V +10%/.
  • 10% core power supply.
  • 2.5 V or 3.3 V I/O supply.
  • LBO pin for Linear or Interleaved Burst mode.
  • Internal input resistors on mode pins allow floating mode.

📥 Download Datasheet

Datasheet Details

Part number GS8256418GB-400
Manufacturer GSI Technology
File Size 405.66 KB
Description 288Mb DCD Sync Burst SRAM
Datasheet download datasheet GS8256418GB-400 Datasheet

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Other Datasheets by GSI Technology

Part Number Description
GS8256418GB-200 288Mb DCD Sync Burst SRAM
GS8256418GB-250 288Mb DCD Sync Burst SRAM
GS8256418GB-333 288Mb DCD Sync Burst SRAM
GS8256418GD-200 288Mb DCD Sync Burst SRAM
GS8256418GD-250 288Mb DCD Sync Burst SRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
GS8256418/36(GB/GD)-400/333/250/200 119- & 165-Bump BGA Commercial Temp Industrial Temp 16M x 18, 8M x 36 288Mb DCD Sync Burst SRAMs 400 MHz–200 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Features • FT pin for user-configurable flow through or pipeline operation • Single/Dual Cycle Deselect selectable • IEEE 1149.1 JTAG-compatible Boundary Scan • ZQ mode pin for user-selectable high/low output drive • 2.5 V +10%/–10% core power supply • 3.3 V +10%/–10% core power supply • 2.5 V or 3.