Datasheet4U Logo Datasheet4U.com

GS832132E-V - 36Mb Sync Burst SRAMs

This page provides the datasheet information for the GS832132E-V, a member of the GS832118E-V 36Mb Sync Burst SRAMs family.

Description

Applications The GS832118/32/36E-xxxV is a 37,748,736-bit high performance synchronous SRAM with a 2-bit burst address counter.

Features

  • IEEE 1149.1 JTAG-compatible Boundary Scan.
  • 1.8 V or 2.5 V core power supply.
  • 1.8 V or 2.5 V I/O supply.
  • LBO pin for Linear or Interleaved Burst mode.
  • Internal input resistors on mode pins allow floating mode pins.
  • Byte Write (BW) and/or Global Write (GW) operation.
  • Internal self-timed write cycle.
  • Automatic power-down for portable.

📥 Download Datasheet

Datasheet preview – GS832132E-V

Datasheet Details

Part number GS832132E-V
Manufacturer GSI Technology
File Size 729.72 KB
Description 36Mb Sync Burst SRAMs
Datasheet download datasheet GS832132E-V Datasheet
Additional preview pages of the GS832132E-V datasheet.

📁 Similar Datasheet

  • GS8331 - 350KHZ Zero-Drift CMOS Rail-to-Rail IO Opamp (GAINSIL)
  • GS8332 - 350KHZ Zero-Drift CMOS Rail-to-Rail IO Opamp (GAINSIL)
  • GS8334 - 350KHZ Zero-Drift CMOS Rail-to-Rail IO Opamp (GAINSIL)
  • GS8000 - DVI / HDMI Extender (Gennum Corporation)
  • GS8041 - 14.5KHZ CMOS Rail-to-Rail I/O Opamp (GAINSIL)
  • GS8042 - 14.5KHZ CMOS Rail-to-Rail I/O Opamp (GAINSIL)
  • GS8043 - 14.5KHZ CMOS Rail-to-Rail I/O Opamp (GAINSIL)
  • GS8043NH - 14.5KHZ CMOS Rail-to-Rail I/O Opamp (GAINSIL)
  • GS8043NL - 14.5KHZ CMOS Rail-to-Rail I/O Opamp (GAINSIL)
  • GS8051 - 250MHZ CMOS Rail-to-Rail Output Opamps (GAINSIL)
Other Datasheets by GSI Technology

Full PDF Text Transcription

Click to expand full text
GS832118/32/36E-xxxV Commercial Temp Industrial Temp 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Features • IEEE 1149.1 JTAG-compatible Boundary Scan • 1.8 V or 2.5 V core power supply • 1.8 V or 2.5 V I/O supply • LBO pin for Linear or Interleaved Burst mode • Internal input resistors on mode pins allow floating mode pins • Byte Write (BW) and/or Global Write (GW) operation • Internal self-timed write cycle • Automatic power-down for portable applications • JEDEC-standard 165-bump FP-BGA package • RoHS-compliant 165-bump BGA package available Functional Description Applications The GS832118/32/36E-xxxV is a 37,748,736-bit high performance synchronous SRAM with a 2-bit burst address counter.
Published: |