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GS832136E-V - 36Mb Sync Burst SRAMs

This page provides the datasheet information for the GS832136E-V, a member of the GS832118E-V 36Mb Sync Burst SRAMs family.

Description

Applications The GS832118/32/36E-xxxV is a 37,748,736-bit high performance synchronous SRAM with a 2-bit burst address counter.

Features

  • IEEE 1149.1 JTAG-compatible Boundary Scan.
  • 1.8 V or 2.5 V core power supply.
  • 1.8 V or 2.5 V I/O supply.
  • LBO pin for Linear or Interleaved Burst mode.
  • Internal input resistors on mode pins allow floating mode pins.
  • Byte Write (BW) and/or Global Write (GW) operation.
  • Internal self-timed write cycle.
  • Automatic power-down for portable.

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Datasheet preview – GS832136E-V

Datasheet Details

Part number GS832136E-V
Manufacturer GSI Technology
File Size 729.72 KB
Description 36Mb Sync Burst SRAMs
Datasheet download datasheet GS832136E-V Datasheet
Additional preview pages of the GS832136E-V datasheet.

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Full PDF Text Transcription

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GS832118/32/36E-xxxV Commercial Temp Industrial Temp 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Features • IEEE 1149.1 JTAG-compatible Boundary Scan • 1.8 V or 2.5 V core power supply • 1.8 V or 2.5 V I/O supply • LBO pin for Linear or Interleaved Burst mode • Internal input resistors on mode pins allow floating mode pins • Byte Write (BW) and/or Global Write (GW) operation • Internal self-timed write cycle • Automatic power-down for portable applications • JEDEC-standard 165-bump FP-BGA package • RoHS-compliant 165-bump BGA package available Functional Description Applications The GS832118/32/36E-xxxV is a 37,748,736-bit high performance synchronous SRAM with a 2-bit burst address counter.
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