GS8360Z18CQ Datasheet | GSI Technology

Preliminary GS81320Z18/36CQ-333M/250M(S/Q/V) GS8680Z18/36CQ-333M/250M(S/Q/V) GS8360Z18/36CQ-333M/250M(S/Q/V) 100-Pin Ceramic QFP Rad-Hard SRAM Military Temp 144Mb/72Mb/36Mb PL/FT Synchronous NBT SRAMs 333 MHz- 250 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Features - Aerospace-Level Product - NBT (No Bus Turn Around) functionality allows zero wait read-write-read bus utilization; Fully pin-patible with both pipelined and flow through Nt RAM™, No BL™ and ZBT™ SRAMs - 2.5 V or 3.3 V +10%/- 10% core power supply - 2.5 V or 3.3 V I/O supply - User-configurable Pipeline and Flow Through mode - LBO pin for Linear or Interleave Burst mode - Byte write operation (9-bit Bytes) - 3 chip enable signals for easy depth expansion - ZZ Pin for automatic power-down - 100-pin Ceramic QFP package available Radiation Performance - Total Ionizing Dose (TID) > 300krads(Si) - Soft Error Rate (SER) = TBR - Neutrons = TBR - Single Event Latchup Immunity > 80 Me...