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GS8360Z18CQ Datasheet Rad-hard Sram

Manufacturer: GSI Technology

Overview: Preliminary GS81320Z18/36CQ-333M/250M(S/Q/V) GS8680Z18/36CQ-333M/250M(S/Q/V) GS8360Z18/36CQ-333M/250M(S/Q/V) 100-Pin Ceramic QFP Rad-Hard SRAM Military Temp 144Mb/72Mb/36Mb PL/FT Synchronous NBT SRAMs 333 MHz–250 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • Aerospace-Level Product.
  • NBT (No Bus Turn Around) functionality allows zero wait read-write-read bus utilization; Fully pin-compatible with both pipelined and flow through NtRAM™, NoBL™ and ZBT™ SRAMs.
  • 2.5 V or 3.3 V +10%/.
  • 10% core power supply.
  • 2.5 V or 3.3 V I/O supply.
  • User-configurable Pipeline and Flow Through mode.
  • LBO pin for Linear or Interleave Burst mode.
  • Byte write operation (9-bit Bytes).
  • 3 chip enable s.

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